Argonne National Laboratory
9700 S. Cass Ave
Argonne, IL 60439
- 2011 – present: Assistant Physicist, X-ray Science Division, Argonne National Laboratory.
- 2013 – present: Adjunct Assistant Professor, EECS, Northwestern University.
- 2007-2008: Postdoctoral Research Scholar, Advanced Light Source, Lawrence Berkeley National Laboratory and Fritz Haber Institute - Max Planck Society
- 2004-2007: Postdoctoral Research Scholar, Advanced Light Source, Lawrence Berkeley National Laboratory and Montana State University
- Ph. D Condensed Matter Physics; University of Wisconsin, Madison, WI; 2004
- B.S. in Physics; West Virginia University, Morgantown, WV; 2000
Research Interests:My research is focused on using x-ray techniques like ARPES and RSXS to study the electronic properties of quantum transport materials, in particular materials that are relevant to nanoelectronics and energy storage needs, like topological insulators, graphene, graphite intercalation compounds and self-assembled nanowires and nanoparticles.
- “Extended van Hove singularity and superconduction instability in doped graphene”,
J. L. McChesney, A. Bostwick, T. Ohta, Th. Seyller, K. Horn, J. Gonzalez, and E. Rotenberg, Phys. Rev. Lett. 104, 136803 (2010).
- “Quasiparticle transformation during a metal-insulator transition in graphene”,
A. Bostwick, J. L. McChesney, K.V. Emtsev, Th. Seyller, K. Horn, S.D. Kevan, and E. Rotenberg, Phys. Rev. Lett. 103,056404 (2009).
- “Friction and dissipation in epitaxial graphene films”,
T. Filleter, J. L. McChesney, A. Bostwick, E. Rotenberg, B.B. Emtsev, Th. Seyller, K. Horn, and R. Bennewitz, Phys. Rev. Lett. 102, 086102 (2009).
- “Coupled Pb Chains on Si(557): Origin of one-dimentional conductance”,
C. Tegenkam, T. Ohta, J. L. McChesney, K.V. Emtsev, A.K. Schmid, T. Seyller, K. Horn, and E. Rotenberg, Phys. Rev. Lett. 100, 076802 (2008).
- “Si (110)5x2-Au: A metallic chain structure”,
J. L. McChesney, J. N. Crain, F. J. Himpsel, and R. Bennewitz, Phys. Rev. B 72, 035446 (2005).
- “Electronic stabilization of a 5x4 dopant superlattice on Si(111)5x2-Au”,
J. L. McChesney, J. N. Crain, V. Perez-Dieste, F. Zheng, M.C. Gallagher, M. Bissen, C. Gundelach, and F. J. Himpsel, Phys. Rev. B 70, 195430 (2004).