Enhanced magnetic orbital moment of ultrathin Co films on Ge (100)
Magnetic transition metals with Curie temperatures above room temperature, grown on semiconductor substrates, offer a viable platform to create semiconductor based spin devices. Spin current scattering at such interfaces remains a technical obstacle. The need to understand the interfacial region may help to reduce intermixing, chemical diffusion, strain, and other potential spin scattering effects. Using X-ray magnetic circular dichroism, the magnetic make-up of ultra thin magnetic films have been investigated. Shown in the inset is the enhanced orbital-spin moment ratio associated with an ultra-thin Co film grown on a Ge (100) substrate [Phys. Rev. B 69, 054416 (2004)].

Local Contact: John Freeland ( freeland@aps.anl.gov)

Posted by: Becky Gagnon ( gagnon@aps.anl.gov)
Content by: Jonathan Lang ( lang@aps.anl.gov)